Electrical properties of chalcogenide glass of composition Ge8As32S60

The results of the studies of the dielectrical and impedance spectra of chalcogenide glass samples of the Ge8As32S60 composition in an AC field of a frequency range of 103–106 Hz are presented. Intense relaxation processes are revealed in the samples under study and a dispersion of the electrical parameters corresponding to a relaxation time distribution by the contribution of dipole compositions, which arise with the participation of charged defect centers caused by the presence of arsenic atoms’ dangling bonds in the structure of chalcogenide semiconductor, is established. It is established that a low-frequency region of the complex impedance’s components of the parameter mentioned is associated with the electrical properties of the contact metal–vitreous semiconductor, while a high-frequency one is associated directly with the properties of the material under study.