Top-Gated Epitaxial Graphene FETs on Si-Face SiC Wafers With a Peak Transconductance of 600 mS/mm

In this letter, we present state-of-the-art performance of top-gated graphene n-FETs and p-FETs fabricated with epitaxial graphene layers grown on Si-face 6H-SiC substrates on 50-mm wafers. The current-voltage characteristics of these devices show excellent saturation with on-state current densities (I on ) of 0.59 A/mm at V ds = 1 V and 1.65 A/mm at V ds = 3 V. I on /I off ratios of 12 and 19 were measured at V ds = 1 and 0.5 V, respectively. A peak extrinsic g m as high as 600 mS/mm was measured at V ds = 3.05 V, with a gate length of 2.94 ?m. The field-effect mobility versus effective electric field (E eff ) was measured for the first time in epitaxial graphene FETs, where record field-effect mobilities of 6000 cm 2 /V·s for electrons and 3200 cm 2 /V·s for holes were obtained at E eff ~ 0.27 MV/cm .