Charge collection mechanisms in MOS/SOI transistors irradiated by energetic heavy ions

The authors have investigated with both experimental and numerical methods (Monte Carlo and drift-diffusion model) various charge collection mechanisms in NMOS/SOI transistors irradiated by single energetic heavy ions. Physical interpretations of data emphasize the influence of various parasitic structures of the device. Two charge collection mechanisms are detailed: substrate funneling in the buried MOS capacitor and latching of the parasitic bipolar transistor. >