Carrier capture in intermixed quantum wires with sharp lateral confinement

We have fabricated GaAs/GaAlAs quantum wires with widths between 220 and 40 nm by high‐dose (2×1014 cm−2) Ga implantation in a locally masked single quantum well structure. The width dependence of the emission energies indicates a steep 1D confinement determined by the lateral straggling of the implanted Ga. The external quantum efficiency of the wires increases strongly with decreasing mask width due to significant carrier capture from the lateral barrier.