Synthesis and doping of microcolumn diamond photoemitters with silicon-vacancy color centers

The method of epitaxial growth of localized photoluminescence sources in the form of the ordered microcolumn diamond structures with silicon-vacancy (SiV) color centers is implemented. The process is based on diamond deposition in microwave plasma in CH4-H2 mixtures in microwells in a silicon mask on a diamond single crystal substrate, where the Si mask itself is a silicon doping source. Strong photoluminescence of SiV centers at a wavelength of 738 nm is detected; the spatial distribution of luminescence completely coincides with the synthesized structure arrangement.