Old Web
English
Sign In
Acemap
>
Paper
>
Suppression of SiO 2 interfacial layer growth for TiN/Hf x Zr 1−x O 2 /Si-MFS fabrication
Suppression of SiO 2 interfacial layer growth for TiN/Hf x Zr 1−x O 2 /Si-MFS fabrication
2021
Takashi Onaya
Toshihide Nabatame
Mari Inoue
Tomomi Sawada
Hiroyuki Ota
Yukinori Morita
Keywords:
Fabrication
Atomic layer deposition
layer
Tin
Materials science
Chemical engineering
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]