High resolution light emitting diode array based on ordered ZnO nanowire/SiGe heterojunction

A high resolution light emitting diode (LED) array based on ordered n-type ZnO nanowire/p-type SiGe heterojunction was proposed. The pixel pitch of the LED array is about 15 µm, corresponding to a pixel density of 3175 dpi. The fabrication and characterizations of the developed LED device were studied in detail. It was shown that the electroluminescence emission of this LED device is mainly in infrared range, which is dominated by the band gap of the SiGe alloy.