Transformation of polarons into magnetopolarons in GaAs quantum well

Abstract An experimental study is made of electron tunneling in a resonant-tunneling diode in magnetic fields directed parallel and perpendicular to the planes of the GaAs/Al X Ga 1 − X As heterostructure layers. In particular, phonon replicas on the current–voltage characteristics of the diode are investigated. In the second current derivatives a fine structure of replicas is found. The transformation of the structure of replicas in a perpendicular magnetic field can be qualitatively understood as a manifestation of the transition of polaron states to magnetopolaronic ones.