Old Web
English
Sign In
Acemap
>
Paper
>
HfO_2をゲート絶縁膜とするAlGaN/GaN MOSFETの作製と評価・解析
HfO_2をゲート絶縁膜とするAlGaN/GaN MOSFETの作製と評価・解析
2009
takasi mizutani
syun sugiura
keiju hayasi
sigeru kisimoto
masayuki kuroda
tetuzou ueda
tuyosi tanaka
Keywords:
MOSFET
Electronic engineering
Materials science
Optoelectronics
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]