Pressure dependence of band discontinuity in GaAs/AlInP quantum well structures

We have performed high-pressure photoluminescence measurements on GaAs/AlInP quantum wells of widths 10 to 100 A at liquid helium temperatures. It is found from the pressure coefficient that the X minima in the AlInP become lower than the confined Γ state in the GaAs wells with widths of less than 30 A. The zero-pressure extrapo-lation of the AlInP(X) to GaAs(Γ) transitions yields a 680 meV valence-band offset and a 770 meV conduction-band offset.