Physical mechanisms of laser correction and stabilization of the parameters of Al-n-n+-Si-Al schottky barrier structures

Optical and scanning electron microscopy in combination with layer-by-layer chemical etching are used to study the physical processes of solid-state diffusion induced by pulsed laser radiation in package-less thin-film Al-n-n+-Si-Al Schottky barrier structures formed on free silicon surface and in SiO2 windows.