XRD Texture and Morphology Analysis of Polycrystalline LPCVD Germanium-Silicon

The morphology and texture of polycrystalline LPCVD GexSi1-x alloys have been studied for various deposition temperatures and for x = 0, x = 1 and x ≈ 0.3. The transition temperature of amorphous to polycrystalline growth is much lower for Ge and GexSi1-x than for Si. Just above this transition temperature, we observed a (220) orientation for all polycrystaline layers grown. At elevated temperatures a change to the (004) orientation for poly-GexSi1-x and (331) for poly-Si and poly-Ge is noted.