Impact ofBEOL,multi-fingered layout design, andgate protection diode onintrinsic MOSFET threshold voltage mismatch

Continued scaling downofMOSFETs, ofintrinsic MOSFETmismatch. Inthis way,ageneric test compounded withlimitation inprocess variation controlstructure forMOSFETmismatch characterisation canbe capabilities, hasmade MOSFET mismatchmore attained. significant foradvancedtechnologies. In orderto prevent overcompensating forMOSFETmismatch in II. MISMATCHTESTSTRUCTURES