One kind microns copper pattern control growth of silicon nanowires precise positioning method

The present invention provides a microns copper pattern control method for precisely positioning the silicon nanowire growth, the method comprising the steps of: providing a substrate comprising a silicon substrate and a top insulating layer positioned on the silicon substrate; then, in the the top surface of the insulating layer made microns copper pattern array; Finally, an annealing treatment, the copper pattern microns array is consumed during the annealing process, while controlling the growth of silicon nanowires through the top insulating layer and accurately positioned in the m copper pattern array position. The present invention, by a silicon microelectronic processing techniques on a silicon oxide support body made microns copper pattern on the array of the insulating layer, and then in an atmosphere of argon and hydrogen annealing process, the copper pattern array microns at a precise positioning grown silicon nanowires. The method is simple, high efficiency and small volume structure, it is compatible with CMOS technology has better scalability, in microelectronics, biological detection field of solar cells and has a wide application prospect.