Kinetically stabilized high-temperature InN growth

Abstract We report on indium nitride growth on sapphire by migration-enhanced plasma-assisted metal organic chemical vapor deposition (MEPA-MOCVD). The growth is studied in the temperature range from 700 ˚C to 957 ˚C, well above the decomposition temperature of indium nitride in conventional MOCVD. Raman spectroscopy, atomic force microscopy, and X-ray diffraction indicate polycrystalline grainy InN film growth.