The uniform crystallization process towards the bottom-gated LTPS TFT back-plane technology for large-sized AM-OLED displays by CW green laser annealing

Issues resulting from the fabrication of bottom-gated LTPS back-planes using large substrates by CW-GLA were overcome by novel design of a-Si and gate insulator thickness making use of thermal and optical simulation. By this, uniform crystallization on gate electrodes and stable TFT characteristics under fluctuation of film thickness became realized.