Electric performance and photosensitivity of heterostructures prepared by thermal decomposition of a gallium nitrate aqueous solution on an indium selenide (0001) cleaved surface

It is shown that thermal decomposition of a gallium nitrate aqueous solution on the surface of a semiconductor in air can basically be used for preparing structures sensitive to radiation from in the near-UV spectral range. The electric and photovoltaic properties of Ga2O3-n-(p-)InSe heterostructures are studied. It is found that a high-ohmic layer arising at the InSe-Ga2O3 interface affects not only the electric performance but also the photoelectric spectra of the heterostructures. It is supposed that current instability with Z- and N-shaped reverse branches in the I-V characteristics of the Ga2O3-p-InSe structures stems from doping nonuniformity in the bulk of quasi-two-dimensional p-type indium selenide.