MOMBE growth of III-V-N-based quantum wells and quantum dots emitting above 1.3 /spl mu/m

Ikuo Suemune,K. Uesugi,G. Sasikala,Makoto Kurimoto,W. Zhou,Periyasamy Thilakan

MOMBE growth of III-V-N-based quantum wells and quantum dots emitting above 1.3 /spl mu/m

2003

Ikuo Suemune
K. Uesugi
G. Sasikala
Makoto Kurimoto
W. Zhou
Periyasamy Thilakan

In this paper, new challenges on the III-V-N based quantum wells (QWs) and quantum dots (QDs) prepared with metalorganic molecular-beam epitaxy (MOMBE) is discussed.

Keywords:

Optoelectronics
Quantum dot laser
Physics
Molecular beam epitaxy
Superlattice
Electro-absorption modulator
Photoluminescence
Condensed matter physics
Quantum well
Quantum point contact
Quantum dot

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