Electrical Charge and HF Concentration Effect on Porous Silicon Formation

Porous silicon (PS) samples fabricated using different electrochemical conditions are studied. A correlation between film porosity and the energy E, provided to the silicon/HF system, is found. The dependence of the etched mass on E is also investigated. A maximum for the porosity is found to exist. The conditions for fabricating PS samples emitting in the visible region are given