Electrical Charge and HF Concentration Effect on Porous Silicon Formation
1994
Porous silicon (PS) samples fabricated using different electrochemical conditions are studied. A correlation between film porosity and the energy E, provided to the silicon/HF system, is found. The dependence of the etched mass on E is also investigated. A maximum for the porosity is found to exist. The conditions for fabricating PS samples emitting in the visible region are given
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