半導体 (GaAlAs) レーザーの露出根面の知覚過敏症に対する効果および歯肉溝領域の細菌叢に及ぼす影響

The purpose of this study was to investigate the effect of GaAlAs-semicondutorlaser irradition dentin hypersensitivity of exposed root surface and its influence to microflora in the dento-gingival region.Twenty two teeth from 6 patients with dentin hypersensitivity of exposed root surface weresubjected to this experiment. This irradiation of GaAlAs-semiconductor laser (central wavelength: 900nm, average output: 2.4mW) was applied to an exposed root surface for 2min30s in the experimental group. Effect of laser irradiation was varified by the examination ofsensitivity rate to cold water, air blow and mechanical stimuli of explorer at before, immediately after, 1 week after and 4 weeks after laser irradiation and at the same time samplingof dental plaque from the dento-gingival region and bacterial measurements by dark fieldmicroscopy were performed. Dummy laser device was used in the control group and followed to carry out the same examination.Laser irradiated group showed significant high improvement of hypersensitivity to coldwater, air blow and mechanical stimuli of explorer compared to control group (p<0.05).No remarkable difference was observed in the total bacterial cell counts and the compositionof micro biota between two groups.GaAlAs-semiconductor laser irradiation is indicated to be effective to dentin hypersensitivity of exposed root surface but failed to have its influence upon micro-flora in the dentogingival region. (J. Jpn. Soc. Laser Dent.4: 3-7, 1993Reprint requests to Dr. Iida)