Old Web
English
Sign In
Acemap
>
Paper
>
Reaction mechanisms at 4H-SiC/SiO 2 interface by the coexistence of dry and wet oxidants
Reaction mechanisms at 4H-SiC/SiO 2 interface by the coexistence of dry and wet oxidants
2021
Tsunashi Shimizu
Toru Akiyama
Tomonori Ito
Hiroyuki Kageshima
Masashi Uematsu
Kenji Shiraishi
Keywords:
Chemical engineering
Interface (Java)
Reaction mechanism
Materials science
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]