On the Excess Noise Factors and Noise Parameter Equations for RF CMOS

This work examines the differences between the g d0 and g m referenced drain current excess noise factors in CMOS transistors as a function of channel length and bias. Using standard linear noisy two-port theory, we present a simple derivation of noise parameters. The results are compared with the well known Fukui's empirical FET noise equations. Experimental data on a 0.18 mum CMOS process are measured and used to evaluate the simple model equations