Structural and Optical Characteristics of Strain-mediated InGaAs Quantum Dots

Self-assembled In x Ga 1-x As quantum dots, with In(Ga)As capping layers to mediate the strain distribution were studied by x-ray reciprocal space mapping, TEM, and PL. The In 0.75 Ga 0.25 As QDs capped with In 0.1 Ga 0.9 As has a PL emission at lambda = 1.31 mum.