A process for preparing low resistance electrodes in capacitors grave

The invention relates to a process for preparing low resistance electrodes in grave capacitors, DOLLAR A, a wafer is provided, DOLLAR A are introduced into the wafer trenches, DOLLAR A is introduced to the wafer in an electrolytic solution containing a salt of an electrically conductive material, DOLLAR A the wafer is electrically contacted, and a voltage between the wafer and, arranged in the electrolyte solution counter electrode is applied such that the electrically conductive material is at least partially electrolytically deposited in the trenches. The electro-deposition of the electrode material enables uniform film thickness along all areas of the trench wall.