Growth and characterization of metal doped and quasi mixed crystals based on ZnCd(SCN)4

Abstract In order to understand the effect of forming hybrid crystals by doping with metallic impurities or by quasi mixing on the physicochemical properties of the basic material crystal, we have grown by the free evaporation method at room temperature and characterized (chemically, structurally, optically and electrically) un-doped and K + /Ca 2+ /Mn 2+ /Mg 2+ /Cu 2+ doped (with 1 mol% concentration) ZnCd(SCN) 4 and Zn x Cd (2-x) (SCN) 4 (with x = 0.0, 0.4, 0.8, 1.2, 1.6 and 2.0) single crystals. Single crystals could be grown with x = 0.0 (leading to Cd(SCN) 2 ) but not when x = 2.0 (leading to Zn(SCN) 2 ). Results obtained in the present study through X-ray diffraction and EDAX spectral measurements indicate the formation of the above hybrid crystals. The optical (UV–Vis-NIR spectral and SHG efficiency) measurements indicate significant changes in optical transmittance and SHG efficiency due to doping as well as quasi mixing. Dielectric measurements made in the temperature range 40–150 °C with a fixed frequency of 1 kHz indicate a normal dielectric behavior for all the eleven crystals grown. Moreover, the present study indicates an increase of dielectric constant and SHG efficiency when ZnCd(SCN) 4 crystal is doped with a metallic impurity whereas a decrease of dielectric constant and SHG efficiency when quasi mixing is done.