New Synthesis Method of TiC Film by Applying High Pressure and Electric Field

1997 
A new synthesis method for TiC films is developed by applying high pressure (1.45 or 10.9 kbar) and electric field (37 or 99 MV/m) to a double layer consisting of a polyethylene film and a Ti film on a steel substrate at room temperature. Not only TiC+ ions but also (TiC2)2+, TiC2H+ and (TiC2)2H+ ions are detected, using secondary ion mass spectroscopy, on the surfaces of the synthesized samples. An X-ray diffraction peak of TiC(111) is clearly visible in the sample heat treated at 600°C for 2 days after synthesising under the conditions of 10.9 kbar and 37 MV/m with a negative electrode on the Ti-film side. The Knoop hardness of this sample shows a higher value than those synthesized using other conditions.
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