Potential enhanced Sb and As doping in Si molecular beam epitaxy

Potential enhanced doping (PED) is a method of enhancing the incorporation efficiency of certain low sticking coefficient dopants in Si molecular beam epitaxy, and obtaining precise control over profiles. The efficacy of PED is demonstrated for Sb, As (and Ga) doping, using elemental and III‐V compound coevaporation sources. Enhanced doping by PED depends on increased incorporaton efficiency from the adsorbed dopant adlayer, and does not significantly affect adsorption/desorption processes.