Fabrication of quantum wire structures by in-situ gas etching and selective-area metalorganic vapor phase epitaxy regrowth

Abstract GaAs quantum wires (QWIs) buried on a V-shaped groove were successfully fabricated by the selective-area in-situ gas etching and regrowth processes in the metalorganic vapor phase epitaxy (MOVPE) reactor. The V-shaped groove formation by in-situ HCl gas etching and the behavior of selective growth in the V-groove were investigated. From the detail study, it was found that the AlGaAs-based quantum wires for the entire range of Al composition can be fabricated by the in-situ fabrication technique with high controllability. Clear photoluminescence peak from an arrowhead-shaped GaAs QWI completely surrounded by Al 0.5 Ga 0.5 As was obtained even at room temperature, indicating that the in-situ etching/regrowth processes are a very promising technique for realizing high performance nanostructure devices such as QWIs.