Characterization of base current transport in polyemitter transistors using low frequency noise analysis

In this paper, we report the study of base current (ib) transport in polyemitter bipolar transistors (PETS) using low frequency noise analysis and suggest that the distribution of the specific carrier transport mechanisms limiting ib can be quantified by acquiring the exponential dependence of fbndamental base current noise (SiEB) on base bias current, This result is important to the resolution of base current mismatching in these devices, which is undesirable for high precision analog circuits. For this investigation, the two carrier transport mechanisms of carrier tunneling through the emitter polysilicon /silicon interface and carrier diffision through the bulk polysilicon [ 11 are considered. To hlly utilize the information contained in the device noise, we have adopted a formulation [2] that makes use of the effects of series resistances and internal emitter feedback to estimate the weighting of the internal noise sources in the device terminal noise SVB. Since rx, and p are critical parameters to this formulation, the device gummel curve was used to extract them and their bias dependence. While the influence of these small signal parameters on SvB dominates at lower biases (Vh<0.7V), the dependence of SiEB on ib can heavily affect SVB at moderate bias (0.7V

Keywords:

• Electronic engineering
• Noise generator
• Physics
• Y-factor
• Noise figure
• Flicker noise
• Noise spectral density
• Noise (electronics)
• Noise temperature
• Burst noise
• Noise measurement
• Shot noise

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