Heavy ion rutherford backscattering analysis used to study the alloyed metal/GaAs interface

Abstract Heavy ion backscattering analysis of the near surface Pd/GaAs and Au:In/Pd/GaAs chemically prepared systems have been investigated as a function of annealing temperature. We performed RBS analysis using a 7 MeV incident energy nitrogen beam connected with time-of-flight spectrometer detection. Using RBS random spectra, such a method can resolve the composition of the alloyed deposited films (less 5 nm) and can profile As and Ga over 40 nm. The two main results obtained from such analysis are: first, chemical palladium deposition is connected with a lack of arsenic which is preferentially exchanged to gallium atoms. Second, palladium diffusion is enhanced when using Au:In/Pd alloyed contacts.