A process for producing a MOSFET device with zugspannungsverformtem substrate

A method for producing a Metalloxidhalbleiterfeldeffekttransistors, MOSFET, comprising: Providing a substrate (40) having a gate (54) overlying the substrate (40) is formed; Depositing a spacer layer and forming a spacer (60) around the gate (54) and a gate insulator around (56), which are arranged above a layer of silicon (42) over the substrate (40); Depositing an etch stop layer (63) over the spacer (60), the gate (54) and the layer of silicon (42); and Depositing a dielectric layer (65) over the etch stop layer (63); wherein at least one of the steps of depositing the spacer layer, depositing the etch stop layer (63) and depositing the dielectric layer (65) comprises a deposition with compressive stress to increase tensile strain in the layer of silicon (42).