Multilayer SOI material and preparation method thereof

The invention discloses a multilayer SOI material and a preparation method thereof, and belongs to the technical field of semiconductor material preparation. The material is a multilayer SOI stacked structure, the top surface and the bottom surface of the stacked structure are silicon chips, and the middle portion is formed by alternative arrangement of silicon chips and BOX layers. In a preparation process, the stress of an oxidation sheet is removed through a CMP method, and bonding of the multilayer SOI can be stacked on the oxidation sheet. Surface treatment of the silicon chip with the surface of the oxidation sheet is performed for 1-5 minutes by employing HF, and plasma activation treatment is also performed; and surface treatment of the silicon chip with the surface of the silicon chip is performed for 1-5 minutes by employing concentrated H2SO4. After the treatment, normal-temperature bonding is then performed, low-temperature annealing can be performed at the temperature of lower than 500 DEG C, extremely good bonding quality is obtained, and the edge loss is less than 0.5 mm in the subsequent thinning process. The whole bonding process is accomplished at a low temperature, and the multi-layer SOI device layer is prevented from high temperature so that defects can be avoided.