InAlN/GaN MISHEMT with plasma enhanced atomic layer-deposited ZrO 2 as gate dielectric

In this letter, we present the electrical properties of the InAlN/GaN metal-insulator-semiconductor high-electron-mobility transistor (MISHEMT) with plasma enhanced atomic layer-deposited ZrO2 as the gate dielectric. The InAlN/GaN MISHEMT with an on/off current (Ion/Ioff) ratio of 1.46×109 as well as a subthreshold swing (SS) of 85 mV/dec was achieved. The interface trap density (Dit) decreased from 1.16 × 1012 eV-1cm-2 (at EC-ET = 0.26 eV) to 4.68 × 1011 eV-1cm-2 (at EC-ET = 0.40 eV), indicating a good interface property. This study suggests a feasible way for the application of ZrO2/InAlN/GaN MISHEMTs