Dual nitride stressor for semiconductor device and method of manufacturing same

A method for manufacturing a semiconductor device includes forming a fin structure over a substrate and forming a first gate structure over a first portion of the fin structure. A first nitride layer is formed over a second portion of the fin structure. The first nitride layer is exposed to ultraviolet radiation. Source/drain regions are formed at the second portion of the fin structure.The embodiment relates to the dual nitride stressor for semiconductor device and method of manufacturing same.