Fin-type field-effect transistor NAND flash with nitride/silicon nanocrystal/nitride hybrid trap layer

The effects of trap layer on NAND flash performances have been described in this paper. In order to overcome the slower programming speed of the discrete trap memory than conventional floating-gate device, nitride and silicon nanocrystal have been assembled together so as to provide the higher trap density for the improved device performance. This hybrid trap layer technology has been applied to the fin-type field-effect transistor (FinFET) NAND flash, and the results show ~5 V of program/erase window with reasonable device reliabilities.