Luminescence of TM 3+ in Gallium Arsenide Grown by Metal-Organic Vapor Phase Epitaxy

We investigate the excitation mechanism of the characteristic 4f luminescence 3H5 → 3H6 of Tm3+ in GaAs by photoluminescence excitation spectroscopy. This luminescence transition is also used to study the incorporation of thulium into the GaAs lattice by angular dependent Zeeman spectroscopy.