Phase change memory device and manufacturing method thereof

The invention discloses a phase change memory device and a manufacturing method thereof. The phase change memory device comprises a semiconductor substrate with a transistor; an intermediate insulation layer disposed on the semiconductor substrate; a plug penetrating through the intermediate insulation layer and connected with the transistor; a first insulation layer disposed on the intermediate insulation layer; a bottom electrode and a first phase change layer penetrating through the first insulation layer and electrically connected with the plug, wherein the bottom electrode is located between the plug and the first phase change layer, and a cross section width of the bottom electrode is less than that of the plug; an etching blocking layer and a second insulation layer sequentially disposed on the first insulation layer; and a second phase change layer which penetrates through the etching blocking layer and the second insulation layer and is electrically connected with the first phase change layer. The phase change memory device can reduce the operation current and the power consumption, and the rate of the finished product and the dependability of the phase change memory device can be improved.