The boost transistor: A field plate controlled LDMOST

In this work we present a new device: the boost transistor. The boost transistor is an LDMOS transistor that is controlled by a separate field plate boost electrode that reduces the specific on-resistance R on A. By applying a positive voltage V boost , this electrode creates an accumulation layer in the drain extension of the device. Compared to the single gate device, the boost transistor results in a specific on-resistance R on A reduction of 15% without requiring any process modification, as is demonstrated by measurements and TCAD simulations. The on-state efficiency with respect to standard LDMOS designs is enhanced and a driving circuit is proposed mantaining the breakdown voltage at 70V.