DMILL (Durci Mixte sur Isolant Logico-Linéaire) A mixed analog-digital radiation hard technology for high energy physics electronics

Abstract A new rad-hard technology suitable for high energy physics electronics is currently under development. This technology uses a SOI substrate with a thick silicon film. It includes CMOS, CJFET and complementary vertical bipolar transistors with a potential multi-Mrad hardness for all these devices. These devices enable the design of both analog and digital functions. CMOS together with bipolar transistors will constitute a BiCMOS technology which will be useful to build high speed architectures. JFETs, which have an intrinsically high hardness behaviour and low noise, should allow the design of very radiation-hard low-noise front-end electronics and are also good candidates for cryogenic applications.