The study of the electric field in nBn InAsSb/AlAsSb medium wavelength infrared detectors

The nBn barrier medium-wave infrared detector is widely used in the field of night defense vision with internal gain. Due to its low dark current and high reliability. As the existence of its barrier layer suppresses the majority carrier current with a low electric field, the electric field distribution inside the device is one of the important factors affecting its performance. In particular, the electric field distributions of the barrier layer show directly effects on the overall performance of the detector. In this paper, Apsys software is used to simulate the absorption layer and the nBn InAs1-xSbx/AlAs1-ySby mid-wave infrared detector with the factors of thickness, composition and doping changes. and the influence of the above factors on the electric field of the device is also analyzed.