A method for fabricating the ordered arrays of silicon nanopillars

Abstract In this paper, the formation of the arrays of silicon nanopillars by means of electron-beam lithography and dry etching is described. Silicon nanopillars 50 to 350 nm in diameter, 80 to 800 nm high were fabricated. Important features of the formation of these structures were described. Cones and tapered cones can be formed with the help of this method.