The nitride semiconductor laser device

Provided is a highly reliable nitride semiconductor laser element that is provided with a robust end surface protection film that does not generate film peeling even during a laser operation. This nitride semiconductor laser element is characterized in being provided with: a semiconductor laminated body, which is formed of a III nitride semiconductor, and which has a light emitting end surface; and a protection film formed of a dielectric multilayer film that is formed to cover the light emitting end surface of the semiconductor laminated body. The nitride semiconductor laser element is also characterized in that: the protection film is configured from the end surface protection layer and an oxygen diffusion suppressing layer, said end surface protection layer and said oxygen diffusion suppressing layer being disposed in this order from the light emitting end surface; the end surface protection layer is a layer containing a crystalline film formed of an aluminum-containing nitride; the oxygen diffusion suppressing layer is a structure having a metal oxide film sandwiched between silicon oxide films; and the metal oxide film is crystallized by means of laser light.