Future directions for higher-efficiency HIT solar cells using a Thin Silicon Wafer

Abstract To reduce the power generation cost of heterojunction with intrinsic thin layer (HIT) solar cells, it is necessary to use a thinner crystalline silicon wafer, as well as to improve the conversion efficiency. We have experimentally confirmed that V OC of the HIT solar cell increases with decreasing the wafer thickness, and can reach a very high V OC of 747 mV with a 58-μm-thick wafer owing to a sufficiently low surface recombination velocity. We also indicate the future directions for improving the efficiency. The uniformization of the texture size of the silicon surface and reduction of the carrier density in TCO film while maintaining an equal or lower conductivity are effective for improving the optical confinement.