of the same semiconductor ESD device and method of operating

A semiconductor device, comprising the following features: an ESD device region disposed within a semiconductor body, the semiconductor body of a first conductivity type; a separation region surrounding the ESD device region; a first doped region of a second conductivity type which is disposed on a surface of the semiconductor body within the ESD device region, said second conductivity type is different from the first conductivity type; a second doped region of the first conductivity type is disposed between the semiconductor body within the ESD device region and at least a portion of the first doped region, the second doped region is doped with a higher concentration than the semiconductor body; a third doped region of the second semiconductor type disposed in the semiconductor body within the ESD device region; a fourth doped region of the first conductivity type which is disposed within the third doped region, wherein the edge of the third doped region is located at a first distance from the edge of the fourth doped region; ...