Origin of dielectric relaxation observed for Ba0.5Sr0.5TiO3 thin-film capacitor

In order to identify the origin of dielectric relaxation of Pt/Ba 1-x Sr x TiO 3 /Pt thin-film capacitors, effects of post-annealing in oxygen ambient on their electrical properties were investigated. From comparison of the electrical properties of as-deposited and post-annealed capacitors, it is concluded that electrons from oxygen vacancies in the interfacial depletion region are the origin of the phenomenon.