Interface Electronic Structure between Aluminum and Black Phosphorus

Abstract The electronic properties of the interface between Al and black phosphorus were studied by photoemission spectroscopy (PES). We observed that the growth pattern of Al deposited onto the BP film is Stranski-Krastanov mode. There is a reaction between Al atoms and P atoms at the interface and forming Al-P compounds, which changes the interface barriers and impedes carrier transfer. It is suggested that an inert buffer layer is necessary to protect BP and lower the carrier barriers to develop Al/BP-based device with high performance.