Stationary and- non-stationary spatial temperature distributions in semiconductors, caused by pulse voltages

Abstract The paper gives a theoretical analysis of threshold failure levels in semiconductor devices with pulse voltages applied. Two models of the heat generation domain are treated: a‘ disc-like ’ defect region and a ‘ needle-like ’ defect region. The stationary level of the maximum temperature is obtained in terms of the radius, thickness and length of the heat generation region. The time-dependent temperature distribution is also considered for the time interval before the stationary temperature level is reached. An experimental procedure is discussed which permits a direct determination of threshold failure temperature. This procedure uses the experimental dependence of the pulse duration before the failure upon the initial temperature of the device. The threshold failure temperature is experimentally determined for discrete silicon transistors using this method.