Method for fabricating non-volatile memory device

PURPOSE: A method for manufacturing a non-volatile memory device is provided to improve process uniformity by forming a cell and a peripheral circuit region which have different pattern densities. CONSTITUTION: A first conductive layer(12B) is formed on a substrate. A first device isolation trench is formed in a cell region. A first device isolation layer is formed in the first device isolation trench. A capping layer(17B) is formed on the first device isolation layer and the first conductive layer. The capping layer and a second insulating layer(16B) are removed.