Fabrication and Characteristics of Nanoscale Stacked-Tunneling-Junctions on Graphite Flake Using Focused Ion Beam

2011 
We report the successful fabrication and characteristics of a nanoscale stack of tunneling junctions formed along the c-axis of thin graphite flakes. The stack was made by a three-dimensional focused-ion-beam etching method. First, a submicron bridge was patterned in a required junction width by normal-direction etching. By tilting the sample stage to 90°, two grooves on the bridge were etched from the lateral direction in order to create the required stack size. The stacked junctions showed a perfect c-axis transport behavior and nonlinear current–voltage (I–V) characteristics at all studied temperatures. We discussed the nonlinear I–V characteristics in detail using the Schottky barrier model and Fowler–Nordheim (FN) tunneling theory. The stack transport characteristics showed good agreement with FN tunneling behavior.
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