Comparison of negative tone resists NEB22 and UVN30 in e-beam lithography

The negative tone resists NEB22 and UVN30 have been studied for their contrast and resolution in e-beam lithography, as well as in 248 nm DUV lithography. Also, their etch resistances have been determined in O"2, SF"6/He and CHF"3/O"2 plasmas in comparison with novolac resists. NEB22 shows a slightly higher resolution and higher contrasts and UVN30 shows a better PEB lattitude. Both resists show excellent etch resistances and can be exposed by a DUV stepper and, hence, are suitable for 'Mix-and-Match' technology. For both resists, processing conditions, which result in higher contrasts, also tend to result in poorer exposure lattitudes.